Abstract
Based on Crosslight APSYS, thin film amorphous Si (a-Si:H)/microcrystalline (μc-Si) dual-junction (DJ) and a- Si:H/amorphous SiGe:H (a-SiGe:H)/μc-Si triple-junction (TJ) solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves for individual junctions are presented for current matching analyses. The whole DJ and TJ cell I-V curves are also presented and the results are discussed with respect to the top surface ZnO:Al TCO layer affinity. The interface texture effect is modeled with FDTD (finite difference time domain) module and results for top junction are presented. The modeling results give possible clues to achieve high efficiency for DJ and TJ thin film solar cells.
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