Dual interface strategies enable efficient wide bandgap perovskite solar cells

Abstract

High performance wide bandgap perovskite solar cells (WB-PSCs) have found widespread applications in tandem solar cells. In WB-PSCs, achieving a high conversion efficiency relies on the effective utilization of light absorption and minimization of electronic defects. In this work, electronic defects at the surface and grain boundaries of perovskite materials have been passivated by n-butylammonium bromide (BABr) to suppress carrier non-radiative recombination. Confirmed through x-ray powder diffraction and x-ray photoelectron spectroscopy spectra, ultra-thin two-dimensional (2D) perovskite layers were successfully generated on a perovskite surface. The BABr-treated devices exhibited an increased fill factor and open circuit voltage (VOC) compared to the references. Furthermore, a nanotextured electrode with a roughness of 22.98 nm was employed to trap light. The nanotextured buried interface not only promoted light utilization but also alleviated residual stress and micro-strain in the perovskite film compared to the smooth substrate. Finally, the champion WB-PSC achieved a power conversion efficiency of 20.46% in the reverse scan. These findings pave a promising path for the development of solution-processed perovskite films on nanotextured silicon substrates to improve the performance of monolithic tandem solar cells.