Abstract
This letter reports on a photosensitive dual-gate amorphous silicon (a-Si:H) thin-film transistor (TFT) for low-level light detection. It differs from a conventional dual-gate TFT in that a 760-nm $\pi $ -shape channel layer is implemented instead of a typically thin a-Si:H layer of 50 $\sim $ 100 nm in the conventional TFTs. Not only such a device improves the photoabsorption, it also preserves the transfer characteristics of the TFT. Upon the low-level light exposure, the photosensitivity can be multiplied by operating the device in the subthreshold region. In addition, resetting the device can minimize the residual photocurrent and improves the photoresponse. The device can be, therefore, sensitive and fast enough to enable optical applications, such as low-dose indirect-conversion X-ray imaging and large-area document scanning.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
