Abstract
We proposed a novel method for scanning tunneling spectroscopy, in which a difference in differential conductance (dI/dV) between two d.c. biases was extracted using a double lock-in technique. We investigated some experimental parameters to be optimized, and finally obtained the spectra of dI/dV differences on self-assembled InAs quantum dot structures. As a result, we observed different conductance gaps attributable to a difference between the band gaps of the quantum dot and the surrounding wetting layer, and observed some peaks in the spectra on the dot as well. In addition, reasonable current-voltage curves were numerically reproduced from the measured dI/dV spectra.
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