Abstract
Deep reactive ion etching (DRIE) of silicon, notably the Bosch DRIE process, has virtually changed microsystem technology over the past decades. Since then, a wide variety of silicon-based microsystems have been implemented in high-volume industrial applications. An important example is inertial sensors for measuring acceleration and yaw rate. This article starts with a historic overview of the origin of this micromachining technology. The background of different microstructuring technologies, including classical wet etching, LIGA technology, and early plasma processing, is given. Special emphasis is put on comparing different solutions for silicon DRIE, both from the process side and from the equipment side. The Bosch process and its most important features are described in detail. Key issues related to DRIE, for example, high-speed etching, mask selectivity, and micromasking, reactive ion etching lag effect, sidewall scalloping, and notching at dielectric etch stop layers are analyzed and corrective measures have been suggested.
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