Abstract
Dry etching of silicon using a radio frequency glow discharge in and gas mixtures have been studied. Both and additives can significantly enhance the silicon etch rate. For low RF power, the same amount of enhances silicon etch rate more than does. When the RF power level is increased beyond a value, becomes more efficient in enhancing the silicon etch rate. The chemisorption model based on the competition between atomic fluorine and oxygen species for active silicon etching sites is applied to explain these etching characteristics. Optical emission spectroscopy is used to measure the relative concentrations of atomic oxygen and fluorine, which are subsequently applied to correlate the silicon etch rates. According to XPS characterization, there is no detectable sulfur contamination on silicon surface after being etched by either plasma.
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