Abstract
Compared to Dram and flash memory, CRAM (chalcogenide random access memory), which is a non-volatile memory using a reversible phase change between amorphous and crystalline state, has many advantages such as high speed, high sensing margin, low operating voltage, and is being pursed as a next generation memory. Being able to pattern and etch chalcogenide in nanoscale is essential for the integration of CRAM. We investigated the etching characteristics of Si2Sb2Te5 in a CHF3/O2 gas mixture using a reactive ion etching system. The nanosized Si2Sb2Te5 patterns were defined by electron-beam lithography, and a hard mask TiN was chosen for Si2Sb2Te5 etching. Using these optimized etching parameters and patterning conditions, 500nm Si2Sb2Te5 square could be successfully obtained with good profiles and uniformity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
