Abstract
In this study, we investigated the etching characteristics of TiN thin film and the selectivity of TiN to SiO 2 in an inductively coupled CF 4/BCl 3/N 2 plasma system. The dry etching mechanism of TiN thin films was studied by varying the CF 4/BCl 3/N 2 gas mixing ratio, RF power, direct current (DC) bias voltage, and process pressure. The optimized process conditions were as follows: RF power of 700 W, DC-bias voltage of − 100 V, process pressure of 1 Pa, and substrate temperature of 40 °C. The maximum etch rate of the TiN thin films was 109 nm/min with the CF 4/BCl 3/N 2 (2:5:15 sccm) plasma. Non-volatile etching byproducts were Ti–F compounds as determined by X-ray photoelectron spectroscopy analysis.
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