Abstract
Zinc oxide (ZnO) thin films have been successfully prepared via a reactive radio frequency (RF) sputtering process. The characterizations of the crystal structure and the morphology of the surface revealed a highly oriented c-axis hexagonal structure with almost homogenous distribution of the grains for the prepared ZnO thin films. The direct current (DC) bias voltage and the effect of acetone vapors on the complex impedance characteristics of the ZnO thin films has been studied. The complex impedance spectroscopy of the prepared ZnO sensor shows a single semicircle which tends to shrink under the effect of both the DC bias voltage and the presence of the acetone vapor. The increase in acetone concentrations and DC applied voltage will result in decreased total sensor resistance and increased capacitance.
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