Abstract
We demonstrate a top–top contact, dry etched mirror facet III–V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 x InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integration of III–V electronic and photonic devices with silicon and ${\rm SiO}_{2}$ . Lasing occurred at $\sim 985$ nm with a threshold current density of $\sim 2 \; {\rm kA}/{\rm cm}^{2}$ . Pulsed measurements, and SEM and TEM characterization methods were used. The issue of heat transfer limited the performance of the laser.
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