Abstract
In this study, we investigated the surface reaction of zinc tin oxide (ZTO) thin films at N2/BCl3/Ar plasma. The maximum etch rate of 136 nm/min for the ZTO thin films was obtained at N2/BCl3/Ar (3/6/14 sccm) gas mixing ratio. The etch conditions were the RF power of 600 W, the DC-bias voltage of –150 V, the process pressure of 2 Pa, and the substrate temperature of 40°C. Corresponding to these etching conditions, chemical reaction of the etched ZTO surface has been studied by x-ray photoelectron spectroscopy measurement to investigate the chemical reactions between the surfaces of ZTO thin film and etch species. Surface morphology of the etched ZTO thin films was characterized using atomic force microscope.
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