Abstract
Time domain spectroscopy has been used to measure the room temperature transmission of highly doped GaAs in the frequency range from 0.2 to above 3 THz. We studied n- and p-type layers, with carrier densities between 1016 and 2×1018 cm−3, which had been grown on undoped GaAs substrates. Transmission spectra could be fitted within experimental error by using a Drude model for the conductivity. Fitted carrier densities for both carrier types and mobilities for p-type GaAs were in good agreement with the results of Hall measurements. In the case of n-GaAs, the optically determined mobility appeared to underestimate slightly the Hall mobility.
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