Abstract
To investigate the variation in internal quantum efficiency in InGaN structures, we measure the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode under varying electroluminescence injection conditions. By coupling this measurement to an internal quantum efficiency measurement, we determine the carrier density and the radiative and nonradiative contributions to the lifetime without making any assumptions on recombination processes. We find that droop is caused by a shortening of the nonradiative lifetime with current. The observed shortening of both radiative and nonradiative lifetimes with current is found to be in excellent agreement with an ABC model including phase-space filling.
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