Abstract
Silicon Carbide (SiC) power MOSFET is becoming popular in applications with high switching frequency, such as EV charger and PV inverter, due to its superior physical properties. Meanwhile, gate driver design becomes critical since SiC MOSFET often operates at frequency of hundreds kHz. In this paper, several key parameters of driver circuit for SiC MOSFET are discussed, such as gate voltage, deadtime, and common mode transient immunity (CMTI) capability. SiC MOSFET requires fast short circuit detection as its sensitivity to the thermal generated during SC. Current slew rate di/dt during turn off also needs to be slowed down for acceptable voltage overshoot. Several methods are discussed for fast short circuit protection and an experiment is done to verify the feasibility.
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