Abstract
This letter proposes an accurate parameter extraction method based on the Levenberg–Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method to study the static behavior of SiC power mosfet s according to the temperature and the input voltage. The simulation results obtained with this proposed method fit perfectly the measurements and accurately describe the static behavior of 1200 V Gen 2 SiC mosfet s. The extracted model parameters (threshold voltage, saturation region transconductance, and transverse electric field parameter) are evaluated to analyze the temperature impact and understand the physical behavior of 1200 V Gen 2 SiC power mosfet .
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