Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

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A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO 2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation