Abstract
An analytical theory has been developed for drift velocity ( V d ) and ionization coefficient ( α h) of holes in silicon. Based on Boltzmann transport equation, expressions for drift velocity ( V d ) and ionization coefficient ( α h) are derived. The theoretical approach is based on calculation of the collision operator for ionization probability, approximated by a delta function. It is observed that the values of drift velocity ( V d ) and ionization coefficient ( α h) are in good agreement with experimental results for ionization length (l io = 70 A ̊ ) and ionization energy ( ϵ i = 2.5 eV). This confirms the validity of the developed theoretical model for drift velocity and ionization coefficient of holes.
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