Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode

Abstract

4H-SiC p–i–n diodes fabricated on the (0001) C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the (0001) Si-face. These drift phenomena in 4H-SiC p–i–n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on (0001) C-face in comparison with that on (0001) Si-face.