Abstract
The electrical properties of poly-silicon gate MOS capacitors with HfO/sub 2/ gate dielectric, with and without Al/sub 2/O/sub 3/ capping layer, were investigated. Without the capping layer, the experimental results show that an unacceptably high gate leakage current due to the interaction between HfO/sub 2/ and poly-silicon was observed; while with a thin Al/sub 2/O/sub 3/ layer capping on 1.61 nm equivalent oxide thickness (EOT) HfO/sub 2/ dielectric, the gate leakage current density can be reduce to approximately 10/sup -7/ A/cm/sub 2/, which is nearly seven orders (10/sup 7/) in magnitude lower than that of using pure oxide with identical EOT.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
