Abstract
A novel characterization technique for DRAM test cell arrays is presented. The new method permits the extraction of subthreshold IV-characteristics of the cell transistor and its threshold voltage with no DC contacts to the source. The DRAM cell is viewed as an equivalent circuit of resistors and capacitors, whose values can be determined by sweeping the frequency of the AC-impedance bridge. Using this technique, it is possible to characterize the cell transistor in its natural habitat without resorting to special test structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
