Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation

Abstract

A novel device configuration is presented for doping-less charge plasma tunnel FET (TFET) for suppression of ambipolar nature with improved high-frequency figures of merit. For this, the drain electrode, which is used to induce n+ drain region, is separated into two sections of high and low work functions. The work function of the drain electrode section near to channel is considered relatively higher than other part for restricting the tunneling of holes at drain/channel interface for negative gate bias. This concept creates asymmetrical charge carrier concentration in the drain region, which increases the tunneling width at the drain/channel interface. Therefore, the proposed device offers better performance in terms of ambipolar current, parasitic capacitance, and RF parameters. In this regard, a comparative study of the proposed device is performed with conventional and dual-metal gate doping-less TFETs. Furthermore, the optimization of the length and higher work function of the drain electrode near to channel is discussed in detail for the proposed device. Apart from above-mentioned advantages, the doping-less nature of the proposed device provides fabrication simplicity and immunity against random dopant fluctuations in comparison with the physically doped TFET.