Abstract
The asymmetric source-drain metal-oxide-semiconductor field-effect transistor (MOSFET) was characterized in detail in comparison with the conventional symmetric source-drain MOSFET. The principal difference between asymmetric and symmetric source-drain MOSFETs is the drain-side structure. The asymmetric source-drain MOSFET has a lightly-doped drain for a low electric field. As a result, the gate-induced drain leakage (GIDL) current is reduced, and the hot carrier reliability is improved.
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