Abstract
This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T−1), which is very effective as compared to other previously reported works for a single device.
Highlights
Magnetic sensors have been used extensively in different fields like vehicle detection systems and biosensing applications [1,2,3,4]
A square metal loop was designed and the device was placed at the center of the loop to get the
Is much smaller dimension than that loop it, and thetest is much smaller in dimension than that of the metal loop around it, and the is placed at the center of the metal loop
Summary
Magnetic sensors have been used extensively in different fields like vehicle detection systems and biosensing applications [1,2,3,4]. The applied magnetic field perpendicular to the inversion layer can be sensed by an imbalance of currents or the Hall voltage depending on the design of the sensing device This approach does not interfere the electrical characteristic of the MOSFET, as reported in [6]. This kind of sensors can be batch-fabricated at very low cost and is able to detect the low magnetic field at room temperature As an another alternative to using the MOSFET inversion layer as the active area for magnetic field sensing applications, the drain of the traditional MOSFET can be divided into two or three parts [8,9,10,11,12,13,14]. The magnetic field for this work has been generated by an on-chip metal loop, which leads to a deflection of the charged carriers in the channel region and, as a result, a significant amount of drain current difference can be observed. The change in drain current due to the applied magnetic field in n-MOSFET can lead us to the conclusion that this single-drain normal-gate n-MOSFET can be used as a potential magnetic sensor
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