Abstract
A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified as a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip metal loop around the device, and the relation between the applied loop current and the created magnetic field is assumed to be linear in nature. The drain current of the MOS transistor is reduced with the applied Lorentz force from both directions. This change in the drain current is ascribed to a change in mobility in the strong inversion region, and a change in mobility of around 4.45% is observed. To model this change, a set of novel drain current equations, under the Lorentz force, for the strong inversion region has been proposed. A satisfactory agreement of an average error of less than 2% between the measured and the calculated drain currents under the magnetic field created by an on-chip metal loop is achieved.
Highlights
In the past few decades, magnetic sensors have aided humans to analyse and control many functions due to their high stability [1,2,3]
magnetic field effect transistors (MagFET) sense the current imbalance between two drains due to the effect of the Lorentz force, but they suffer from a large offset due to a mismatch between two drains, and they suffer from temperature drift and noise [4,5]
According to the results presented here, mobility can be altered by applying magnetic fields that ensure the change in drain current only due to a change in mobility of the device under test (DUT)
Summary
In the past few decades, magnetic sensors have aided humans to analyse and control many functions due to their high stability [1,2,3]. Cheap and easy to produce, Hall sensors, especially when integrated inside real integrated circuits, are generally affected by the magnetic flux from the surroundings that may affect the field which Hall sensors intend to detect To overcome this issue, the size of the device in other semiconductor-based sensors such as MagFETs and rectangular MOS transistors must be large enough so that the effect of the Hall voltage is suppressed. In all the reported cases there is no model for the drain current using the Lorentz force to demonstrate the magnetoresistance effect [8]. In [10,11], the done arts at very low dealt temperatures impractical for real-life Lorentz forceineffect, these presented current presented current models aremagnetic difficult to use orwith to be integrated circuitand simulators.
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