Drag Resistivity of Hole-Hole Static Interactions with the Effect of Non- Homogeneous Dielectric Medium

Abstract

BACKGROUND: We have study the Coulomb drag phenomena for hole-hole static potentials theoretically and measured numerically using the random phase approximation (RPA) method OBJECTIVE: The drag resistivity is evaluated at low temperature, large interlayer separation limit and weakly screening regime, with the geometry of two atomically thin materials, such as, BLG/GaAs based multilayer system, is a promising systems in nanomaterials and technology METHOD: Static local field corrections (LFC) are considered to take into account the Exchange-correlations (XC) and mutual interaction effects with varying concentrations of active and passive layer RESULT: It is found that the drag resistivity is found enhanced on using the LFC effects and increases on increasing the effective mass. In Fermi-Liquid regime, drag resistivity is directly proportional to T^2, n^(-3), d^(-4) and ϵ^2 with respect to temperature (T), density (n), interlayer separation (d~nm) and dielectric constant (ϵ_2), respectively. CONCLUSION: Dependency of drag resistivity is measured and compared to 2D e-e and e-h coupled-layer systems with and without the effect of non-homogeneous dielectric medium.