DPSS Laser에 의한 As40Ge10Se15S35, Ag/As40Ge10Se15S35와 As40Ge10Se15S35/Ag/As40/Ge10Se15S<sub>3

Abstract

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on <TEX>$As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$</TEX> and <TEX>$As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$</TEX> thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in <TEX>$0.24mW/cm^2$</TEX>, single <TEX>$As_{40}Ge_{10}Se_{15}S_{35}$</TEX> thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in <TEX>$2.4mW/cm^2$</TEX>, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of <TEX>$0.24mW/cm^2$</TEX> beam. <TEX>$Ag/As_{40}Ge_{10}Se_{15}S_{35}$</TEX> double layer and <TEX>$As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$</TEX> multi-layered thin film also show the faster grating forming speed at <TEX>$2.4mW/cm^2$</TEX> and higher value of diffraction efficiency at <TEX>$0.24mW/cm^2$</TEX>.