Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers

Abstract

Double-heterostructure diode lasers emitting at 3 μm have exhibited pulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.