Abstract
A twice-transferred layer of indium phosphide (InP) onto a host substrate by means of ion cutting and adhesive wafer bonding was demonstrated to be suitable for device integration. A thin layer was first transferred onto a glass handle through the ion-cutting process by hydrogen implantation and adhesive bonding. The InP/adhesive/glass structure was then bonded to a host substrate using benzocyclobutene, followed by thermal separation of the temporary bond. The surface of the resulting InP layer is that of the original substrate, demonstrating the feasibility of prefabricated device layer transfer without etching sacrificial donors. The electrical properties of the transferred layer are also presented.
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