Double-wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion laser-assisted metalorganic molecular beam epitaxy

Abstract

This letter reports a laser diode array of InGaAsP/InGaAsP multiple quantum well (MQW) lasers, emitting at different wavelengths, grown by Ar ion laser assisted metalorganic molecular beam epitaxy. A separate confinement heterostructure MQW laser film was locally irradiated during well growth with an Ar ion laser and processed into a laser diode array having a 6 μm stripe width and 300 μm pitch. The laser diode with an irradiated MQW active layer operated at 1.40 μm; the laser diodes with nonirradiated MQW active layers operated at 1.28 μm. The threshold currents of the 300 μm-long laser diodes were 23 mA for the irradiated diode and 55 mA for the nonirradiated diodes.