Abstract
Picosecond time-resolved photoluminescence (TRPL) has been employed to study the effects of well thickness on the light emission properties and recombination dynamics in In/sub x/Ga/sub 1-x/N/GaN and GaN/Al/sub x/Ga/sub 1-x/N multiple quantum wells (MQWs) grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE). In this work we present results from a set of MOCVD grown In/sub x/Ga/sub 1-x/N/GaN and a set of MBE grown GaN/Al/sub x/Ga/sub 1-x/N MQW samples with well thicknesses varying from 20 to 90 /spl Aring/. Results from these MQW samples are compared with each other and also to InGaN and GaN epilayers to extrapolate the mechanisms and quantum efficiency of the optical emission in these structures. The implications of these results on device applications, in particular for blue LEDs and laser diodes will be discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
