Abstract
Thin films of La0.65R0.05Ca0.3MnO3 (R = Ho and Y) grown using pulsed laser deposition (PLD) technique on (100) NdGaO3 (NGO) single-crystal substrates have shown a decrease in TP farther from the corresponding values obtained on bulk samples. This decrease could be attributed to an additional substrate strain effect. The uniqueness of the present result is that Ho-doped La0.7Ca0.3MnO3 (LCMO) films have shown drastic reduction in resistance (ρmax) compared to that of Y-doping similar to what has been observed in the bulk samples. We have also fabricated a novel FM/I/FM (FM = ferromagnet (La2/3Ba1/3MnO3 (LBMO) in this case); I = insulator) tunnel junction by replacing the widely used SrTiO3 (STO) insulating layer by an insulating phase of Ho-doped LCMO composition (La0.55Ho0.15Ca0.3MnO3) to study the MR and electronic correlation effects. High resistance values have been realized across junctions made up of the LCMO-based insulating layer. This result could open up new avenues in TMR research.
Published Version
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