Double step buried oxide (DSBO) SOI-MOSFET: A proposed structure for improving self-heating effects

Abstract

For the first time, a novel structure named as double step buried oxide silicon-on-insulator-MOSFET (DSBO-SOI) is proposed, which can combine the advantages of both SOI structure and bulk structure. Design consideration for a 30 nm channel length SOI-MOSFET employing double step buried oxide (DSBO) is presented. The electrical characteristics and temperature distribution are analyzed and compared with ultra-thin body silicon-on-insulator (UTB-SOI) MOSFET. The DSBO devices are shown to have better leakage and sub-threshold characteristics. Furthermore, the channel temperature is reduced during high-temperature operation and drain current increase suggesting that DSBO can mitigate the self-heating penalty effectively. Our results suggest that DSBO is an alternative to silicon dioxide as the buried dielectric in SOI, and expands the application of SOI to high temperature.