Double-sided silicon strip sensors formed by concatenated drift cells

Abstract

Double-sided Silicon Strip sensors (DSSD) can cover large areas and volumes of silicon with a relatively small amount of readout channels. If used for spectroscopy though, their resolution is limited by the large readout capacitance of p- and n-side strips. This paper presents the idea of small Silicon Drift Detector (SDD) cells whose anodes are connected to form n-side strips similar to double-sided strip sensors. Their combined n-side capacitance should be significantly lower than continuous strips and improve spectroscopic energy resolution. The p-side strips are used to deliver a prompt trigger signal and position information. Such concatenated sdds (c-SDD) can only be reasonably implemented for a strip pitch larger than the wafer thickness.