Abstract
In this paper Double Resonator Topology is used to achieve high isolation and low insertion loss in single pole double through (SPDT) switch. This SPDT switch is based on GaAs MESFET and operates in the band of 8 to 11 GHz. This circuit is tuned to give optimum very high isolation and low insertion loss in 9-10 GHz frequency band. It uses one series and three shunt branches. One series and one shunt branch capacitances are resonated out with parallel inductance. This circuit is fabricated and performance measured. The measured performance of this MMIC SPDT switch has insertion loss lower than 2 dB and isolation better than 46 dB in 9-10 GHz and insertion loss lower than 2.2 dB and isolation better than 42 dB in 8-11 GHz. This circuit has to be integrated with other component to demonstrate X-band core chip.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
