Abstract
A high isolation and low insertion loss transmit/receive switch is presented. The T/R Switch is based on the TSMC 0.18 μm 1P6M RFCMOS process. Shunt inductor resonance and body-floating techniques are used to improve the isolation and power handling capability. The simulation exhibit the insertion loss is 612mdB, the isolation between transmitter and receiver is 44.3 dB, input 1-dB compression point (P1dB) of 26.38 dBm. The chip area is 0.825×0.813 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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