Abstract
Lattice matched InAlGaAs tunnel junctions with a 1.18 eV bandgap have been grown for a triple-junction solar cell on InP. By including two InGaAs quantum wells in the structure, a peak tunnel current density of 113 A/cm2 was observed, 45 times greater than the baseline bulk InAlGaAs tunnel junction. The differential resistance of the quantum well device is 7.52 × 10−4 Ω cm2, a 15-fold improvement over the baseline device. The transmission loss to the bottom cell is estimated to be approximately 1.7% and a network simulation demonstrates that quantum well tunnel junctions play a key role in improving performance at high sun-concentrations.
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