Abstract
Molecular beam epitaxy (MBE) of GaAs and AlAs on the GaAs(110) surface has been studied in situ using reflection high-energy electron diffraction (RHEED). Additionally ex situ atomic force microscopy (AFM) has been employed to investigate the surface topography after the growth. During the growth complex RHEED oscillations with a single and a double period can be measured, depending on the diffraction feature that is monitored. The AFM images of the surface reveal mono- and bilayer high steps and islands, reflecting a layer-by-layer growth with the participation of both at the same time. A simple model that leads to a qualitative understanding of the experimental observation is presented.
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