Abstract
Emission rate spectra S(λ) of the DX-centers in AlxGa1-xAs were studied for dopants, such as Te, Sn, Si and Se, using the SADLTS (spectral analysis of deep level transient spectroscopy) method. The double peak emission rate spectra were observed for these DX-centers in AlxGa1-xAs at around x=0.5 of Al mole fraction. The band effect (crossover of L-band and \\varGamma-band) is the dominant contribution to the rather broadened spectra of DX-centers appearing in the conventional DLTS.
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