Abstract
We report a high electronic-optical power conversion efficiency of 11.4% in the laser operation of a double-mesa-structure vertical-to-surface transmission electro-photonic device with a vertical cavity. This high conversion efficiency is due to both reduction in the device resistance and increase in light emission efficiency. To reduce electrical resistance, a double mesa structure with a highly doped region is proposed and the resistance reduction is analyzed. To increase light emission efficiency, efficient carrier confinement in the active region by a proton-implanted structure, threshold current reduction by photon recycling, and decreased light absorption by annealing after proton implantation are utilized. Electronic-optical conversion efficiency of over 10% is achieved in surface-emitting devices for the first time to the authors' knowledge.
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