Abstract
Electronic-optical conversion efficiency of 11.4% in a vertical-to-surface-transmission electrophotonic device with a vertical cavity is reported. Reduction of the electrical resistance by the double mesa structure, efficient confinement of carriers in the active region by the proton implanted structure, and photon recycling by sidewall reflectors lead to this high conversion efficiency. Efficiency over 10% is achieved for the first time in surface-emitting devices. >
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