Abstract
Double integrated laser InGaAs/GaAs/AlGaAs heterostructures grown by the method of metal-organic vapor phase epitaxy (MOVPE) in a single epitaxial process are studied. Typical slopes of the watt—ampere characteristic for a single laser diode were 1.08–1.15 W A-1, while these slopes for the double integrated laser diode proved to be considerably higher (1.88–2.01 W A-1). The manufactured double laser diodes emitting ∼0.9 μm, 100-ns pulses at a pulse repetition rate of 10 kHz produce an output power of 50 W at pump current of 30 A.
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