Abstract
A prototype industrial apparatus for growing gallium nitride (GaN) epitaxial films by the method of vapor-phase epitaxy in the chloride-hydride system is designed and built. Epitaxy is carried out simultaneously on 3 silicon carbide (SiC) substrates 35 mm in diameter. The distribution of growth rates along the gas flow and over the transverse cross section of the reactor is investigated. The epitaxial films are studied by x-ray diffraction and photoluminescence methods.
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