Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates

Abstract

Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 108 to 109 cm–2 are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H2 atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.