Double injection of charge carriers in chemical vapor deposited diamond-based diodes

Abstract

Boron ion implantation of thermochemically polished chemical vapor deposited diamond films with multienergies ranging between 24 and 150 keV and a total dose of about 2×1016 cm−2 is used to get p-type conductivity. n-type conductivity is achieved by lithium ion implantation of the diamond films with a single energy of 50 keV and a dose of 2×1016 cm−2. The intrinsic areas separating the p- and n-doped regions form the active areas of the diodes into which charge carriers are simultaneously injected upon bias. Onset voltages of <10 V are due to the low concentration (∼1014 cm−3) of nitrogen related centers in the diamond films. The current–voltage (I–V) characteristics of the p-i-n diodes manifest trap filling, Frenkel–Poole emission, thermionic emission, and space charge limited current regimes. At 300 °C, currents as high as 12 mA are measured at a forward bias of 100 V. Rectification ratios of up to about four orders of magnitude are achieved. They increase with increasing width of the i region within the measured i region of 3–10 μm, as a result of the considerable decrease of the reverse bias current relative to the forward bias current.