Double injection function InGaZnO transistor—computational analysis of the patterned doping method

Abstract

Metal oxide-based electronics is advancing rapidly where the reduced dimensions require transistor structures different to conventional CPUs. The double injection function transistor (DIFT) is a type of a source-controlled transistor. As doping is a facile method in the semiconductor industry, we suggest that the DIFT can be realized through a doping pattern under the source electrode. We show that double doping functions similarly to the double work function DIFT, recently demonstrated. We use device simulations to analyze the operation principle of the DIFT structure and provide design guidelines. We find that the structural separation of the injection and depletion functions allows adapting the transistor structure to fabrication process limitations. A 200 nm channel length InGaZnO based device can be designed to exhibit proper saturation at sub-1 V drain bias.