Abstract
High−optical−quality planar waveguides have been fabricated in the Pb1−xSnxTe alloy system by molecular beam expitaxy. The structures consist of a 6−μm−thick low−carrier−concentration (≲4×1016 cm−3) Pb0.92Sn0.08Te layer vacuum deposited on an n−type PbTe substrate followed by a second 0.5−μm−thick epitaxial layer of n−type PbTe. The measured propagation loss of ⩽1.5 cm−1 (6.5 dB/cm) for TE−polarized 10.6−μm laser radiation in these waveguides at 77 K is sufficiently low for integrated optical circuits in this wavelength range, and the waveguide fabrication techniques are compatible with those used for lasers and detectors in Pb1−xSnxTe epitaxial layers.
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