Abstract
GaAs/GaAlAs double heterojunction I2L inverters with a vertical pnp current source were fabricated by ion implantation and Zn-diffusion into LPE structures. The current gain of the upside-down-operated double heterojunction npn transistor has been improved by a factor of two compared to the gain of the npn transistor of the otherwise similar structure. In addition, the wide-gap junction pnp transistor gives a solution to the critical switch-on problem which can occur when a wide-gap emitter transistor is used for the switching transistor.
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