Double Gate Tunnel FET Versus Double Gate MOSFET: Electrical Properties Comparison

Abstract

In this manuscript, an investigation, with the help of extensive device TCAD Sentaurus simulations, is presented for comparative analysis to understand the effects of variations in gate and drain potential on the device electrical properties of such silicon double gate tunnel field effect transistor (DG TFET) as well as DG MOSFET. The study is mainly focused at electrical properties like electrical channel potential, electric channel field, electron density, electron quasi-fermi potential in channel, drain current, and threshold voltage calculation. From the TCAD simulated study, it is found that electrical properties in the channel region of DG TFET are quite different from DG MOSFET. It is observed that the central channel potential of DG TFET is not pinned to a fixed potential even after threshold voltage (as in case of DG MOSFET occurs), but it initially increases and later on decreases with increasing gate voltage. It is also observed that the threshold voltage extracted with maximum transconductance method or linear extrapolation (LE) and electron quasi-fermi potential of DG TFET are much higher than the DG MOSFET’s one. It is also observed that just on-set of inversion is not sufficient condition for DG TFET threshold voltage. These differences are explained in this paper with proper physics reasoning.