Abstract
In this paper, analog performance of short channel symmetric double-gate junctionless transistor (DGJLT) is reported for the first time. The analog performance parameters, namely drain current (I(D)), transconductance (G(m)), transconductance/drain current ratio (G(m)/I(D)), early voltage (V(EA)), drain output conductance (G(D)), output resistance (R(o)), intrinsic gain (G(m)R(o)), gate to source capacitance (C(GS)), gate to drain capacitance (C(GD)) and unity gain cut-off frequency (f(T)) for the n-type DGJLT are systematically investigated with the help of extensive device simulations and are compared with conventional inversion mode symmetric double-gate transistor (DGMOS) of similar dimensions. DGJLT offers superior transconductance/drain current ratio and intrinsic gain in the subthreshold region than its inversion mode counterpart having same dimensions. However, DGMOS presents higher unity gain cut-off frequency which makes it suitable for high speed applications as compared to a DGJLT transistor.
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