Double Gate 6H-Silicon Carbide Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor

Abstract

This article presents a novel structure for efficient label free biosensing applications. The proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities to detect the biomolecules. Using Atlas TCAD simulations, it has been verified that the proposed device has the maximum ON current sensitivity of 1.02 × 105, transconductance sensitivity of 7.741 × 104, ION/IOFF sensitivity of 31.4, sub-threshold swing sensitivity of 77.19 mV/decade and threshold voltage sensitivity of 34.54 mV for neutral biomolecule with K = 12. Similar simulations have also been performed for different charged biomolecules, varying from ± 5 × 1010 C/cm2 to ± 1 × 1012 C/cm2. Besides, the proposed biosensor shows exceptional performance in terms of ON-current selectivity and sub-threshold swing selectivity. Finally, to check the device response for the changing input parameters, linearity of the biosensor has been analyzed. The achieved near-unity value of the Pearson’s fitness coefficient signifies the strong positive correlation between ION/IOFF and dielectric property of the biomolecules.